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| LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE 3 COLLECTOR MMBT2222AWT1 3 1 2 2 EMITTER CASE 419-02, STYLE 3 SOT-323 /SC - 70 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RJA TJ , Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AWT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE EB V (BR)CEO V (BR)CBO V (BR)EBO 40 75 6.0 -- -- -- -- -- 20 10 Vdc Vdc Vdc nAdc nAdc I BL I CEX 1. Pulse Test: Pulse Width<300 s, Duty Cycle<2.0%. K1-1/2 LESHAN RADIO COMPANY, LTD. MMBT2222AWT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 50 75 100 40 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS (1) DC Current Gain (1) (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) -- -- -- -- -- Vdc 0.3 1.0 Vdc 0.6 -- 1.2 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz) Output Capacitance (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Noise Figure (V CE= 10 Vdc, I C = 100 Adc, R S= 1.0 k, f = 1.0 kHz) fT C obo C ibo h ie h re h fe h oe NF 300 -- -- 0.25 -- 75 25 -- -- 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k X 10 -- mhos dB -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0 Vdc, V BE= - 0.5 Vdc I C = 150 mAdc, I B1 = 15 mAdc) (V CC = 30 Vdc, I C = 150 mAdc I B1 = I B2 = 15 mAdc) td tr ts tf -- -- -- -- 10 25 225 60 ns ns 1. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. K1-2/2 |
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